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GBL08E-E3/P
Bridge Rectifiers
Vishay General Semiconductor – Diodes Division
BRIDGE RECT 1PHASE 800V 3A GBL
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image of Bridge Rectifiers>GBL08E-E3/P
GBL08E-E3/P
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
GBL08E-E3/P
Bridge Rectifiers
Vishay General Semiconductor – Diodes Division
BRIDGE RECT 1PH
Bridge Rectifiers
Bulk
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay General Semiconductor – Diodes Division
Series-
PackageBulk
Product StatusACTIVE
Package / Case4-SIP, GBL
Mounting TypeThrough Hole
Diode TypeSingle Phase
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyStandard
Supplier Device PackageGBL
Voltage - Peak Reverse (Max)800 V
Current - Average Rectified (Io)2.6 A
Voltage - Forward (Vf) (Max) @ If1 V @ 4 A
Current - Reverse Leakage @ Vr5 µA @ 800 V
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